FREDFETs
Overview
FOR 250 kHz - 2 MHz SWITCHING APPLICATIONS
The Ultrafast, Low Gate Charge MOSFET family combines the lowest gate charge available in the industry with Microsemi’s proprietary self-aligned aluminum metal gate structure. The result is a MOSFET capable of extremely fast switching speeds and very low switching losses. The metal gate structure and the layout of these chips provide an internal series gate resistance (EGR) an order of magnitude lower than competitive devices built with a polysilicon gate. These devices are ideally suited for high frequency and pulsed high voltage applications.
Typical Applications:
The Ultrafast, Low Gate Charge MOSFET family combines the lowest gate charge available in the industry with Microsemi’s proprietary self-aligned aluminum metal gate structure. The result is a MOSFET capable of extremely fast switching speeds and very low switching losses. The metal gate structure and the layout of these chips provide an internal series gate resistance (EGR) an order of magnitude lower than competitive devices built with a polysilicon gate. These devices are ideally suited for high frequency and pulsed high voltage applications.
Typical Applications:
- Class D amplifiers up to 2MHz
- High voltage pulsed DC
- AM transmitters
- Plasma deposition/etch
- Series Gate Resistance (Rg) <0.1 ohm
- Tr and Tf times of <10ns
- Industry's Lowest Gate Charge
- Fast switching, uniform signal propagation
- Pulse power applications
- Fast switching, reduced gate drive power
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