1214GN-650V |
Product Status
In Production |
Overview
The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150?s pulse width, 10% duty cycle across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain Efficiency (%) | nd | 69 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 10 | % | ||
Frequency (GHz) | F | 1.2 | 1 | GHz | |
Gain | G | 17 | dB | ||
Output Power (W) | POUT | 700 | W | ||
Pulse Width (PW) | τ | 150 | µs |
Resources
Datasheets | |
---|---|
1214GN-650V Datasheet |
App Notes | |
---|---|
Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
---|---|
GaN Transistor Selection Guide |
Other | |
---|---|
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Product Briefs | |
---|---|
1214GN Class AB GaN-on-SiC HEMT Transistors |
Quality Certificates | |
---|---|
ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
This part can be found in the following product categories:
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules L-Band Pulsed Primary Radar Output Stage