MDSGN-750ELMV |
Product Status
In Production |
Overview
The MDSGN-750ELMV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 750 Watts of pulsed RF output power at ELM pulse format across the 1030 to 1090 MHz band. The transistor has internal prematch for optimal performance. This hermetically sealed transistor is specifically designed for Mode-S ELM Avionics applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain Efficiency (%) | nd | 70 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 6.4 | % | ||
Frequency (GHz) | F | 1.03 | 1 | GHz | |
Gain | G | 19.1 | dB | ||
Output Power (W) | POUT | 800 | W |
Resources
Datasheets | |
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MDSGN-750ELMV Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
Ordering
This part can be found in the following product categories: