IRVINE, Calif., Jul 29, 2010 (GlobeNewswire via COMTEX News Network) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog mixed-signal integrated circuits, high reliability semiconductors and RF subsystems, announced today a new 2,200 watt peak RF power silicon carbide transistor, extending its market leading portfolio of silicon carbide (SiC) devices for high power UHF Band pulsed radar applications.

With the introduction of the new model 0405SC-2200M device, Microsemi supports next-generation UHF pulsed radar designs with a full series of SiC transistor options from 100 watts, 500 watts, 1,000 watts, 1,500 watts and now 2,200 watts for both weather and long range over-the-horizon radar applications. .

"We are excited to be the market leader in silicon carbide broadband transistors designed specifically for the UHF radar market,"
said Charles Leader, Microsemi RFIS Vice President. "This 2,200 watt device
results from our long-term commitment to the military and aerospace markets, aggressively investing in SiC technology. In addition to supporting next-generation UHF designs, we're developing high pulsed power SiC transistors for both L-Band and S-Band radar systems. Our initial L-Band devices are scheduled for demonstration this fall," he said.

The 0405SC-2200M transistor is a Generation 3 Chip in its geometry, materials, processing and packaging. It is designed in a single-ended package for common gate 2,200 watt Class AB performance in the UHF frequencies from 406 MHz to 450 MHz. A hermetically sealed package built with 100% high temperature gold metallization and wires provides highest reliability and improved system yields. Its advanced SiC design provides state-of-the-art power in the industry's smallest transistor and circuit size for the specified frequency range.

Additional system benefits include simplified impedance matching, a high 125 volt operating voltage that drastically reduces power supply size and dc current demand, low conducting current minimizing system noise, and the industry's highest peak power for reduced system power combining -- 4 way combination yields 8 kW with margin.

0405SC-2200M Features:

  --  Designed for 406-450 MHz UHF Radar
  --  Medium Pulse 300 us, 6% Format
  --  2,200 Watt Output Power
  --  Typical Power Gain Greater than 8 dB
  --  Drain Efficiency: 55% at 450 MHz
  --  Typical Compression: 1.0 dB
  --  Vdd: +125V
  --  Rugged VSWR-T 10:1 Capability

Demo units are available now by contacting the factory directly or by email to sic@microsemi.com. Technical datasheets are available on the Microsemi website at www.microsemi.com.

About Microsemi

Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed-signal integrated circuits, high reliability semiconductors and RF subsystems. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.

Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and reliability, battery optimization, reducing size or protecting circuits. The principal markets the company serves include implanted
medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by visiting its website at http://www.microsemi.com.

The Microsemi Corporation logo is available at http://www.globenewswire.com/newsroom/prs/?pkgid=1233

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements concerning the new 2,200 watt peak RF power silicon carbide transistor, extending its market leading portfolio of silicon carbide (SiC) devices for high power UHF Band pulsed radar applications, are forward-looking statements. These forward-looking statements are based on our current expectations and
are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry
conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.

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SOURCE: Microsemi Corporation

CONTACT:  Microsemi Corporation
Financial Contact:
John Hohener, Executive Vice President and CFO
(949) 221-7100
Editorial Contact:
Cliff Silver, Corporate Communications Manager

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