About Microsemi News Contact Employment Home
keyword
search:
 part number
search:


6/17/2010


IRVINE, Calif., Jun 17, 2010 (GlobeNewswire via COMTEX News Network) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, announced today that the Defense Supply Center Columbus (DSCC) has granted space-level qualification on the balance of Microsemi's first family of radiation-hardened power MOSFET devices. These popular N-Channel power MOSFETs now join Microsemi's already-qualified P-Channel power MOSFETs to complete the family of radiation hardened devices originally targeted in this development program.

Microsemi is releasing 20 new radiation-hardened hermetic power MOSFET devices in three through-hole and two surface-mount packages. These devices are radiation hardened to meet the total dose requirements of MIL-PRF-19500 up to 300,000 RAD(Si).

"Our customers
now have what they have been asking for all along: a new source for radiation
hardened MOSFETs," said Doug Milne, Vice President and General Manager of Microsemi's Lawrence, Massachusetts facility. He added; "The introduction of this new product family shows our commitment to the space industry and in Microsemi remaining the number one power discrete supplier in the high reliability market. Work is already under way on our next generation of radiation hardened products."

All devices are constructed to meet the demanding requirements of space applications. Radiation-hardened MOSFETs are primarily used in power supplies, power converters, motor controls, and other power switching applications. These products use the latest wafer fabrication technologies developed in Microsemi's Garden Grove, CA facility.

Features include:


-- Total dose hardened to 300K RAD(Si)
-- 100V & 200V N-Channel devices
-- 100V P-Channel devices
-- Three through-hole hermetic package outlines
-- Two surface-mount hermetic package configurations
-- Fast switching, low RDS(ON) characteristics
-- Single event hardened


Microsemi's full line of space-level qualified radiation hardened power MOSFETs:


Part Number BVDSS RDS(ON) I(D) CH Package MIL-PRF-19500

JANSR2N7261 100V 0.18 ohm 8A N TO-205AF(TO-39) /601
JANSF2N7261 100V 0.18 ohm 8A N TO-205AF(TO-39) /601
JANSR2N7262 200V 0.18 ohm 5.5A N TO-205AF(TO-39) /601

JANSF2N7262 200V 0.18 ohm 5.5A N TO-205AF(TO-39) /601
JANSR2N7261U 100V 0.18 ohm 8A N 18 Pin LCC /601
JANSF2N7261U 100V 0.18 ohm 8A N 18 Pin LCC /601

JANSR2N7262U 200V 0.18 ohm 5.5A N 18 Pin LCC /601
JANSF2N7262U 200V 0.18 ohm 5.5A N 18 Pin LCC /601
JANSR2N7268 100V 0.065 ohm 34A N TO-254AA /603

JANSF2N7268 100V 0.065 ohm 34A N TO-254AA /603
JANSR2N7269 200V 0.1 ohm 26A N TO-254AA /603
JANSF2N7269 200V 0.1 ohm 26A N TO-254AA /603

JANSR2N7268U 100V 0.065 ohm 34A N TO-267AB(SMD1) /603
JANSF2N7268U 100V 0.065 ohm 34A N TO-267AB(SMD1) /603
JANSR2N7269U 200V 0.1 ohm 26A N TO-267AB(SMD1) /603

JANSF2N7269U 200V 0.1 ohm 26A N TO-267AB(SMD1) /603
JANSR2N7380 100V 0.18 ohm 14.4A N TO-257AA /614
JANSF2N7380 100V 0.18 ohm 14.4A N TO-257AA /614

JANSR2N7381 200V 0.4 ohm 9.4A N TO-257AA /614
JANSF2N7381 200V 0.4 ohm 9.4A N TO-257AA /614
JANSM2N7382 -100V 0.3 ohm -11A P T0-257AA /615

JANSD2N7382 -100V 0.3 ohm -11A P T0-257AA /615
JANSR2N7382 -100V 0.3 ohm -11A P T0-257AA /615
JANSF2N7382 -100V 0.3 ohm -11A P T0-257AA /615

JANSF2N7389 -100V 0.30 ohm -6.5A P T0-205AF(T0-39) /630
JANSR2N7389 -100V 0.30 ohm -6.5A P T0-205AF(T0-39) /630
JANSF2N7389U -100V 0.30 ohm -6.5A P 18 Pin LCC /630
JANSR2N7389U -100V 0.30 ohm -6.5A P 18 Pin LCC /630

All Microsemi radiation hardened MOSFETs are offered up to Radiation Hardness Assurance (RHA) Level F (Total ionizing dose 300K RAD(Si). All standard lower total dose levels are also available. A full description of these devices and technical data sheets are available on the Microsemi website: www.microsemi.com.

About Microsemi

Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed-signal integrated circuits, high reliability semiconductors and RF subsystems. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.

Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and
reliability, battery optimization, reducing size or protecting circuits. The principal markets the company serves include implanted medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by visiting its website at http://www.microsemi.com.

The Microsemi Corporation logo is available at http://www.globenewswire.com/newsroom/prs/?pkgid=1233

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements concerning the Defense Supply Center Columbus (DSCC) having granted space-level qualification on the balance of Microsemi's first family of radiation-hardened power
MOSFET devices, are forward-looking statements.. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product
liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or
circumstances.

This news release was distributed by GlobeNewswire, www.globenewswire.com

SOURCE: Microsemi Corporation

CONTACT:  Microsemi Corporation
Financial Contact:
John Hohener, Executive Vice President and CFO
(949) 221-7100
Editorial Contact:
Cliff Silver, Corporate Communications Manager
(949) 221-7100


(C) Copyright 2010 GlobeNewswire, Inc. All rights reserved.


News Provided by COMTEX


Privacy Policy | Site Map | Terms & Conditions

Avionics | Backlight Inverters | L-Band Radar | LED Driver | LDMOS & VDMOS | MOSFETs, IGBTs, & Diodes | Pin Diodes | Power Modules
RF Power & Bipolar Transistors | S-Band Radar | SCR | Thyristors | Varacter Diode | WLAN Power Amplifier | Zener Diode | Power Over Ethernet | IEEE802.3af | PoE ICs

Copyright © 2010 Microsemi Corporation. All rights reserved.  The Endwave logo is a registered trademark of Endwave Corporation.