Microsemi's GaAs Gunn diodes-epi-up (anode heatsink) are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5-35.5 GHz.
|Select Property Type||Symbol||Min||Typ||Max||Unit|
|Operating Current (mA)||IOP||140.00||mA|
|Operating Frequency (GHz)||FOP||60.50||85.00||GHz|
|Output Power (mW)||POUT||50.00||mW|
This part can be found in the following product categories: