2N5116 (#53405) |
Product Status
In Production |
Overview
This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. |
Package Carrier: | ESD Bag |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Input Capacitance (Common Source, Short-Circ | Ciss | 27 | pF | ||
Reverse Transfer Capacitance (Common-Source, | Crss | 7 | pF |
Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Junction Temperature (°C) | TJ | -65 | 200 | °C | |
On-State Resistance | RDS(on) | 75 | Ω | ||
Power Dissipation | PD | 1 | W |
Alphanumeric Parameter | Value |
---|---|
JFET Type | P-Channel |
Quality Level | - |
Resources
Datasheets | |
---|---|
LDS-0006 Datasheet |
Quality Certificates | |
---|---|
ISO 9001:2015 Certificate - Bend, OR, USA | |
MIL-PRF-19500N JANS, JANTXV, JANTX, JAN Certificate - Bend, OR, USA | |
MIL-STD-790 - Taguig City, Philippines | |
PHIL AS9100D |
This part can be found in the following product categories: