2N3019 (#52905) |
Product Status
In Production |
Overview
This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. |
Package Carrier: | ESD Bag |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector to Emitter Saturation Voltage | VCE(sat) | 0.2 | V | ||
Input Capacitance | Cin | 60 | pF | ||
Output Capacitance | Co | 12 | pF |
Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector Current (dc) | IC | 1 | A | ||
Collector to Base Voltage (Emitter Open) | VCBO | 140 | V | ||
Collector-Emitter Voltage (Base Open) | VCEO | 80 | V | ||
Emitter-Base Voltage (Collector Open) | VEBO | 7 | V | ||
Junction Temperature (°C) | TJ | -65 | 200 | °C | |
Power Dissipation | PD | 0.8 | W | ||
Thermal Resistance, Junction to Ambient (°C/ | RθJA | 195 | °C/W | ||
Thermal Resistance, Junction to Case (°C/W) | RθJC | 30 | °C/W |
Alphanumeric Parameter | Value |
---|---|
Quality Level | - |
Resources
Datasheets | |
---|---|
LDS-0185 Datasheet |
Ordering
This part can be found in the following product categories: