DC35GN-15-Q4 |
Product Status
In Production |
Overview
The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness.Features
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Electrical Rating | Symbol | Min | Typ | Max | Unit |
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Drain Efficiency (%) | nd | 66 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 10 | % | ||
Frequency (GHz) | F | 0.05 | 4 | GHz | |
Gain | G | 18 | dB | ||
Output Power (W) | POUT | 19 | W | ||
Pulse Width (PW) | τ | 1000 | µs |
Resources
Datasheets | |
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DC35GN-15-Q4 Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
Ordering
This part can be found in the following product categories:
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules General Purpose SMT to 3.5 GHz and General Purpose Drivers to L-Band
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules