JANSM2N3700 (#349821) |
Product Status
In Production |
Overview
This NPN leaded metal device is RAD hard qualified for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. |
Package Carrier: | Tray |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector to Emitter Saturation Voltage | VCE(sat) | 0.2 | V | ||
Input Capacitance | Cin | 60 | pF | ||
Output Capacitance | Co | 12 | pF |
Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector Current (dc) | IC | 1 | A | ||
Collector to Base Voltage (Emitter Open) | VCBO | 140 | V | ||
Collector-Emitter Voltage (Base Open) | VCEO | 80 | V | ||
Emitter-Base Voltage (Collector Open) | VEBO | 7 | V | ||
Junction Temperature (°C) | TJ | -65 | 200 | °C | |
Power Dissipation | PD | 0.5 | W | ||
Thermal Resistance, Junction to Ambient (°C/ | RθJA | 325 | °C/W | ||
Thermal Resistance, Junction to Case (°C/W) | RθJC | 150 | °C/W |
Alphanumeric Parameter | Value |
---|---|
Quality Level | JANS |
Resources
Datasheets | |
---|---|
LDS-0263 Datasheet |
App Notes | |
---|---|
MicroNote 050: Radiation Hardened Performance of Discrete Semiconductor Products |
Ordering
This part can be found in the following product categories: