1011GN-800V |
Product Status
In Production |
Overview
The 1011GN-800V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 19 dB gain, 800 Watts of pulsed RF output power at ELM pulse format across the 1030MHz to 1090MHz avionic band. The transistor has internal pre-matching for optimal performance. This hermetically sealed transistor is specifically designed for IFF & Mode-S ELM avionics applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain Efficiency (%) | nd | 80 | % | ||
Drain Supply Voltage (dc) | VDD | 52 | V | ||
Duty Cycle % | Duty Cycle (%) | 2 | % | ||
Frequency (GHz) | F | 1.03 | 1 | GHz | |
Gain | G | 19.35 | dB | ||
Pulse Width (PW) | τ | 32 | µs |
Resources
Datasheets | |
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1011GN-800V Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Product Briefs | |
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1011GN L-Band GaN-on-SiC Transistors |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
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